2N5551
描述：TO-92 塑封封装 NPN 半导体三极管。
特征：击穿电压高,可与 2N5401 互补。
用途：用于普通高压放大。
内部等效电路
引脚排列
1 2 3
PIN1：Collector PIN 2：Base PIN 3：Emitter
电性能参数 / Electrical Characteristics(Ta=25℃)
参数 Parameter | 符号 Symbol | 测试条件 Test Conditions | 最小值 Min | 典型值 Typ | 最大值 Max | 单位 Unit |
Collector Cut-Off Current | ICBO | VCB=180V IE=0 | 0.1 | μA | ||
Emitter Cut-Off Current | IEBO | VEB=6.0V IC=0 | 0.1 | μA | ||
DC Current Gain | hFE(1) | VCE=5.0V IC=10mA | 50 | 200 | 400 | |
hFE(2) | VCE=5.0V IC=50mA | 20 | 160 | |||
hFE(3) | VCE=5.0V IC=1.0mA | 40 | 190 | |||
Collector to Emitter Saturation Voltage | VCE(sat) (1) | IC=10mA IB=1.0mA | 0.06 | 0.15 | V | |
VCE(sat) (2) | IC=50mA IB=5.0mA | 0.09 | 0.3 | V | ||
Base to Emitter Saturation Voltage | VBE(sat) (1) | IC=10mA IB=1.0mA | 0.7 | 1.0 | V | |
VBE(sat) (2) | IC=50mA IB=5.0mA | 0.8 | 1.0 | V | ||
Base to Emitter Voltage | VBE | VCE=5.0V IC=10mA | 0.68 | 0.75 | V | |
Current Gain Bandwidth Product | fT | VCE=10V IC=10mA | 50 | 110 | MHz | |
Output Capacitance | Cob | VCB=10V IE=0 f=1.0MHz | 2.2 | 5.0 | pF | |
Turn On Time | ton | IC=100mA IB1=-IB2=10mA | 0.3 | μs | ||
Turn Off Time | toff | IC=100mA IB1=-IB2=10mA | 0.4 | μs | ||
Storage Time | tstg | IC=100mA IB1=-IB2=10mA | 0.2 | μs |
