BC550
描述：TO-92(R)塑封封装 NPN 半导体三极管
特征：高电压，低噪声。
用途：用于低噪声放大。
内部等效电路：
引脚排列
1 2 3
PIN1：Emitter PIN 2：Base PIN 3：Collector
电性能参数
参数 Parameter | 符号 Symbol | 测试条件 Test Conditions | 最小值 Min | 典型值 Typ | 最大值 Max | 单位 Unit |
Collector to Emitter Breakdown Voltage | VCEO | IC=10mA IB=0 | 45 | V | ||
Collector to Base Breakdown Voltage | VCBO | IC=10μA IE=0 | 50 | V | ||
Emitter to Base Breakdown Voltage | VEBO | IE=10μA IC=0 | 5.0 | V | ||
Collector Cut-Off Current | ICBO | VCB=30V IE=0 | 0.015 | μA | ||
DC Current Gain | hFE | VCE=5.0V IC=2.0mA | 110 | 800 | ||
Collector-Emitter Saturation Voltage | VCE(sat) | IC=100mA IB=5.0mA | 0.6 | V | ||
Base-Emitter Saturation Voltage | VBE(sat) | IC=100mA IB=5.0mA | 0.9 | V | ||
Base-Emitter Voltage | VBE(on) | VCE=5.0V IC=2.0mA | 0.55 | 0.7 | V | |
Current Gain Bandwidth Product | fT | VCE=5.0V IE=10mA f=100MHz | 300 | MHz | ||
Transition Frequency | Cob | VCB=10V IE=0 f=1.0MHz | 4.5 | pF | ||
Noise Figure | NF | VCE=5.0V Rg=10KΩ IC=200μA f=1.0KHz | 10 | dB |
