40N20

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Drain-Source Breakdown Voltage

VDSS

VGS=0V        ID=250μA

200

V

Zero Gate Voltage Drain Current

IDSS

VDS=200V        VGS=0V Ta=25℃

10

μA

VDS=160V        VGS=0V Ta=125℃

200

Gate-Body Leakage Current

Forward

IGSS

VGS=±20V

±100

nA

Static Drain-Source

On-Resistance

RDS(on)

VGS=10V        ID=20A

0.054

0.065

Ω

Gate Threshold Voltage

VGS(th)

VDS=VGS        ID=250μA

2.0

4

V

Forward Transconductance

gfs

VDS=15V        ID=20A

65

S

Input Capacitance

Ciss

VGS=0V        VDS=25V

f=1.0MHz

5000

pF

Output Capacitance

Coss

300

Reverse Transfer Capacitance

Crss

7

Turn-On Delay Time

td(on)

ID=20A        VDD=100V VGS = 10V        RG = 3.9Ω

19

ns

Turn-On Rise Time

tr

30

Turn-Off Delay Time

td(off)

68

Turn-Off Fall Time

tf

25

Total Gate Charge

Qg

ID=20A        VDD=100V VGS = 10V

68

nC

Gate-Source Charge

Qgs

17

Gate-Drain Charge

Qgd

16

Continuous Source Current

IS

40

A

Maximum Pulsed Current

ISM

160

A

Diode Forward Voltage

VSD

IS=40A        VGS=0V

1.5

V

Reverse Recovery Time

trr

IS=20A        Tj=25℃

dIF/dt=100A/us,VGS=0V

250

ns

Reverse Recovery Charge

Qrr

1.5

μC