70N75
描述：TO-252 塑封封装 N 沟道 MOS 场效应管
特征：低栅极电荷，开关速度快。
用途：用于低压电路如：汽车电路、DC/DC 转换、便携式产品的电源高效转换。
内部等效电路
引脚排列
电性能参数
参数 Parameter | 符号 Symbol | 测试条件 Test Conditions | 最小值 Min | 典型值 Typ | 最大值 Max | 单位 Unit |
Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 75 | V | ||
Zero Gate Voltage Drain Current | IDSS | VDS=75V VGS=0V | 1 | μA | ||
VDS=75V TJ=55℃ | 5 | |||||
Gate-Body Leakage Current Forward | IGSS | VGS=±20V VDS=0V | 100 | nA | ||
Gate Threshold Voltage | VGS(th) | VDS=VGS ID=250μA | 2.0 | 3.4 | 5.0 | V |
Total gate charge | RDS(on) | VGS=10V ID=30A | 6.4 | 8 | mΩ | |
TJ=125°C | 20 | mΩ | ||||
Drain-Source Diode Forward Voltage | VSD | VGS=0V IS=70A | 1.35 | V | ||
Gate resistance | Rg | VGS=0V VDS=0V f=1MHz | 1.14 | Ω | ||
Input Capacitance | Ciss | VDS=25V VGS=0V f=1.0MHz | 2870 | pF | ||
Output Capacitance | Coss | 490 | pF | |||
Reverse Transfer Capacitance | Crss | 244 | pF | |||
Total Gate Charge | Qg | VGS=10V VDS=30V ID=30A | 65 | 85 | nC | |
Gate Source Charge | Qgs | 23 | 30 | nC | ||
Gate Drain Charge | Qgd | 23.5 | 21 | nC | ||
Turn-On Delay Time | td(on) | VGS=10V VDS=30V RL=1Ω RGEN=3Ω | 20 | 26 | ns | |
Turn-On Rise Time | tr | 48 | 63 | ns | ||
Turn-Off Delay Time | td(off) | 30 | 40 | ns | ||
Turn-Off Fall Time | tf | 10 | 13 | ns | ||
Body Diode Reverse Recovery Time | trr | IF=30A dI/dt=100A/μs | 43 | 56 | ns | |
Body Diode Reverse Recovery Charge | Qrr | IF=30A dI/dt=100A/μs | 88 | 114 | nC |
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5%max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
