2N5401
描述：TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package.
特征：击穿电压高,可与 2N5551 互补。
用途：用于普通高压放大。
内部等效电路
引脚排列
1 2 3
PIN1：Collector PIN 2：Base PIN 3：Emitter
电性能参数
参数 Parameter | 符号 Symbol | 测试条件 Test Conditions | 最小值 Min | 典型值 Typ | 最大值 Max | 单位 Unit |
Collector Cut-Off Current | ICBO | VCB=-180V IE=0 | -0.1 | μA | ||
Emitter Cut-Off Current | IEBO | VEB=-6.0V IC=0 | -0.1 | μA | ||
DC Current Gain | hFE(1) | VCE=-5.0V IC=-10mA | 50 | 400 | ||
hFE(2) | VCE=-5.0V IC=-50mA | 20 | ||||
hFE(3) | VCE=-5.0V IC=-1.0mA | 40 | ||||
Collector to Emitter Saturation Voltage | VCE(sat) (1) | IC=-10mA IB=-1.0mA | -0.12 | -0.4 | V | |
VCE(sat) (2) | IC=-50mA IB=-5.0mA | -0.5 | -0.8 | V | ||
Base to Emitter Saturation Voltage | VBE(sat) (1) | IC=-10mA IB=-1.0mA | -0.75 | -1.0 | V | |
VBE(sat) (2) | IC=-50mA IB=-5.0mA | -0.8 | -1.0 | V | ||
Base to Emitter Voltage | VBE | VCE=-5.0V IC=-10mA | -0.7 | -0.75 | V | |
Current Gain Bandwidth Product | fT | VCE=-10V IC=-10mA | 50 | 80 | MHz | |
Output Capacitance | Cob | VCB=-10V IE=0 f=10MHz | 2.5 | 5.0 | pF | |
Turn On Time | ton | IC=-100mA –IB1=IB2=-10mA | 0.1 | μs | ||
Turn Off Time | toff | IC=-100mA –IB1=IB2=-10mA | 0.2 | μs | ||
Storage Time | tstg | IC=-100mA –IB1=IB2=-10mA | 0.1 | μs |
